Flash memory

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The simplest model of a flash memory is a series of interconnected blocks that store data in a non-volatile manner. Each block consists of individual cells, known as floating-gate transistors, which are made up of two layers of polysilicon and silicon dioxide. These cells are arranged in a matrix, allowing for the storage of binary data. When a cell is programmed to store a 1, an electric charge is injected into the floating gate, creating an electrical potential difference between the gate and the substrate. This difference causes the threshold voltage of the transistor to change, effectively storing the data. Conversely, when a cell is programmed to store a 0, no charge is injected, and the transistor's threshold voltage remains unchanged. Data is read from flash memory by applying a small voltage pulse to the control gate, which allows electrons to flow through the tunnel oxide and into the substrate. The resulting current is then measured, determining whether the cell stores a 1 or a 0.